Researchers from ETH Zurich and the University of Bordeaux are due to report on the world record RF performance of a heterojunction bipolar transistor at the International Electron Devices Meeting (IEDM) coming up in San Francisco in December.
Paper 34.6 THz InP/GaAsSb DHBTs with Record ᵅ0 average frequency of 800GHz: Characterization to 330GHz describes a double heterojunction bipolar transistor (DHBT) with potential for terahertz applications and use in cryogenic environments such as quantum computing and outer space.
The transistor, fabricated in InP/GaAsSb, was first revealed at IEDM 2021 but the faster these transistors can operate the harder it is to measure their performance. The device has 175nm-wide emitter fin above a 40nm base. It occupies an area of 0.2-micron by 9.2 micron.
At IEDM 2023 the team will discuss advances in characterization of the terahertz transistor and metrology methods that have revealed key parameters up to 330GHz. These methods have enabled the researchers to determine the DHBT has an average operating frequency of 800GHz. The team is also due to present cryogenic data for the terahertz transistor showing an F-t/f-max at 50K temperature of 570GHz/1.46THz.
This is a world record for any HBT, the paper precis asserts.