Infineon expands CoolSiC 750V MOSFETs with ultra-low RDS(on)
Infineon Technologies has announced an extension to its CoolSiC MOSFET 750V G2 family with new package options, targeting higher efficiency and power density in automotive and industrial power conversion. The latest devices combine very low on-resistance with packaging designed to support demanding thermal and reliability requirements. the company reports..
For eeNews Europe readers designing next-generation power electronics, the announcement seems to address two persistent challenges at once: improving system efficiency while shrinking form factors. The new devices potentially broaden design options across fast-growing markets such as EVs, charging infrastructure, and high-efficiency power supplies.
Broader portfolio for automotive and industrial power
The extended CoolSiC MOSFET 750V G2 portfolio is now offered in packages including Q-DPAK and D2PAK, with typical RDS(on) values down to 60 mΩ at 25°C. According to Infineon, the devices are aimed at applications such as onboard chargers and high-voltage to low-voltage DC-DC converters in vehicles, as well as server and telecom switched-mode power supplies and EV charging infrastructure.
At the lower end of the on-resistance spectrum, devices with RDS(on) as low as 4 mΩ are intended for applications that demand excellent static switching performance, the company notes. These include eFuses, high-voltage battery disconnects, solid-state circuit breakers, and solid-state relays. In such use cases, lower conduction losses translate directly into higher efficiency, reduced thermal stress, and more compact system designs.
Packaging and performance features
A key element of the new family is Infineon’s top-side cooled Q-DPAK package, which is designed to optimize thermal performance in high-power applications. According to Infineon, by improving heat removal, the package supports higher power density and system reliability, particularly in space-constrained automotive and industrial designs.
From a device-performance perspective, the CoolSiC MOSFET 750V G2 technology delivers strong figures of merit, including favorable RDS(on) x QOSS and best-in-class RDS(on) x Qfr, the company notes. These characteristics help reduce switching losses in both hard-switching and soft-switching topologies, with particular benefits in hard-switching scenarios where efficiency margins are often tight.
The devices also focus on robustness. Infineon highlights a high threshold voltage, with a typical VGS(th) of 4.5 V at 25°C, and an ultra-low QGD/QGS ratio to improve immunity against parasitic turn-on. Extended gate-drive capability supports static gate voltages down to –7 V and transient voltages down to –11 V, giving designers additional margin and compatibility when pairing devices in complex power stages.
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