Nexperia BV has entered into a partnership with Mitsubishi Electric Corp. of Japan to jointly develop silicon-carbide (SiC) MOSFETs.
The announcement comes quickly after Nexperia announced it would be selling its wafer fab in Newport, Wales to Vishay Intertechnology Inc. (see Vishay to buy Newport fab for $117 million).
Mitsubishi Electric will leverage its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET die that Nexperia will use to develop SiC discrete devices. Mitsubishi announced earlier this year that it is planning to build a 200mm wafer fab for SiC devices in Japan (see Mitsubishi to build 200mm SiC fab, assembly plant).
Mitsubishi sells power semiconductors and power modules into automotive, home appliances, industrial equipment and traction motors for trains. Nexperia provides silicon power semiconductor discrete components and wide bandgap power semiconductors.
Masayoshi Takemi, in charge of semiconductor and devices at Mitsubishi Electric, said: “Nexperia is a leading company in the industry with proven technology in high quality discrete semiconductors. We are delighted to have reached an agreement on a partnership for joint development that leverages the semiconductor technologies of both companies.”
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