Onsemi plans trench SiC devices

Onsemi plans trench SiC devices

Business news |
By Nick Flaherty

Onsemi is developing silicon carbide MOSFETs using a trench structure rather than a planar for later this year with samples expected in 2024.

The company has SiC epitaxial wafer plant near Brno in the Czech Republic with device manufacturing at a fab in Korea. The move to a trench structure allows more devices to be built on a 150mm (6in) wafer, driving down the cost of the devices. The company also has an engineering programme for 200mm (8in) SiC wafer production.

This follows the launch of the latest generation of 1200 V EliteSiC M3S devices with an on resistance down to. These are aimed at 800 V electric vehicle (EV) on-board charger (OBC) and energy infrastructure applications, such as EV charging, solar and energy storage systems.

The EliteSiC M3S devices are also used in half-bridge power integrated modules (PIMs) with low Rds(on) in a standard F2 package. Targeting industrial applications, the modules are ideally suited for DC-AC, AC-DC and DC-DC high power conversion stages. They provide higher levels of integration with optimized direct bonded copper designs to enable balanced current sharing and thermal distribution between parallel switches. The PIMs are designed to deliver high power density in energy infrastructure, EV DC fast charging and uninterruptible power supplies (UPS).

“onsemi’s latest generation of automotive and industrial EliteSiC M3S products will allow designers to reduce their application footprint and system cooling requirements,” said Asif Jakwani, senior vice president and general manager of the Advanced Power Division, onsemi. “This helps designers to develop high power converters with higher levels of efficiency and increased power densities.”

The automotive-qualified 1200 V EliteSiC MOSFETs are tailored for high-power OBCs up to 22 kW and high voltage to low voltage DC-DC converters. M3S technology has been developed specifically for high-speed switching applications and has a figure of merit for switching losses of XXX.


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