Rad hard GaN HEMT transistors for space designs
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Infineon Technologies has launched a family of radiation hardened Gallium Nitride (GaN) transistors built in-house at its own foundry.
The GaN High Electron Mobility Transistor (HEMT) devices are based on Infineon’s CoolGaN technology and are certified for reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.
The devices can be used for satellites in orbit, manned space exploration and deep space probes and sit alongside the radiation hardened silicon MOSFET portfolio. Infineon is also running multiple lots prior to full JANS production release to ensure long term manufacturing reliability.
“The Infineon team continues to push the limits of power design with our new GaN transistor line,” said Chris Opoczynski, Senior Vice President and General Manager HiRel, at Infineon. “This milestone brings the next-generation of high reliability power solutions for mission-critical defense and space applications that utilize the superior material properties of wide bandgap semiconductors to customers serving the growing aerospace market.”
The first three product variations in the new radiation hardened GaN transistor line are 100 V, 52 A devices featuring an industry leading (R DS(on) (drain source on resistance) of 4 mΩ (typical) and total gate charge (Qg) of 8.8 nC (typical). Encased in robust hermetically sealed ceramic surface mount packages, the transistors are Single Event Effect (SEE) hardened up to LET (GaN) = 70 MeV.cm2/mg (Au ion). Two devices, which are not JANS certified, are screened to a Total Ionizing Dose (TID) of 100 krad and 500 krad. The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794.
Infineon is the first company in the industry to achieve the DLA JANS certification for fully internally manufactured GaN power devices. DLA JANS certification requires rigorous levels of screening and Quality of Service Class Identifiers to ensure the performance, quality, and reliability required for space flight applications.
Engineering samples and evaluation boards are available immediately with the final JANS device being released in the summer of 2025. Additional JANS parts are launching soon, expanding available voltages and currents to enable customers greater flexibility in creating efficient and reliable designs.
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