Renesas steps up GaN battle as Transphorm deal completes
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Renesas Electronics has completed the acquisition of Tranphorm and launched 15 GaN-based reference designs.
The acquisition of Transphorm steps up the battle in GaN devices with Infineon, which acquired GaN Systems last year.
The 15 reference designs launched by Renesas cover embedded processing, power, connectivity and analog portfolios. These include the designs of Transphorm’s automotive-grade GaN technology integrated for on-board battery chargers as well as 3-in-1 powertrain solutions for EVs.
- Transphorm looks for a buyer
- Renesas to buy Transphorm for automotive GaN boost
- Transphorm, Weltrend extend integrated GaN System-in-Package
“Customers instantly benefit from the new GaN products through turnkey reference designs, which integrate technologies from both companies,” said Chris Allexandre, Senior Vice President and General Manager of Power at Renesas.
“Adding GaN into our portfolio also reinforces our commitment to develop products and technology that make people’s lives easier. Providing robust and sustainable power solutions that save energy, reduce cost and minimize environmental impacts does just that.”
Other recent moves that Renesas has made to bolster this market segment include: the opening of the Kofu Factory, a dedicated 300-mm wafer fab for power products; ramping up a new SiC production line at the Takasaki Factory; and an agreement with Wolfspeed to secure a steady supply of SiC wafers over the next 10 years.
Transphorm was founded in 2007 in Goleta, California, with roots from the University of California at Santa Barbara. The reference designs include
- 500W Onboard Battery Charger for 2-Wheeler EV
- 3-in-1 EV Unit: Inverter, Onboard Charger, DC/DC Converter
- 240W 48V Extended Power Range AC/DC Adapter
- 3.6KW Bi-directional Digital Power DAB System
Wide bandgap (WBG) materials such as GaN and silicon carbide (SiC) are considered key technologies for next-generation power semiconductors due to their superior power efficiency, higher switching frequencies and small footprints compared to conventional silicon-based devices. Both GaN and SiC-based products are expected to grow rapidly over the next decade, driven by demand from electric vehicles (EVs), inverters, data centre servers, artificial intelligence (AI), renewable energy, industrial power conversion, consumer applications and others.
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