Samsung begins making QLC 1Tbit 3D-NAND
Samsung Electronics Co. Ltd. has begun mass production of a 1Tbit quad-level cell (QLC) vertical NAND non-volatile memory.
The memory will be deployed in solid-state drives (SSDs) and Universal Flash Storage (UFS) modules for mobile applications. It comes four months after the company announced production of a triple-level cell version of the same capacity memory.
Samsung no longer reports the number of layers used within its 3D-NAND devices but according to other reports the number of layers in the QLC 1Tbit is 286.
“Kicking off the successful mass production of QLC 9th-generation V-NAND just four months after the TLC version allows us to offer a full lineup of advanced SSD solutions that address the needs for the AI era,” said SungHoi Hur, an executive vice president at Samsung Electronics.
Samsung’s Channel Hole Etching technology was used to achieve the highest layer count in the industry with a double stack structure. The bit density is 86 percent higher than that of the previous generation QLC 3D-NAND.
Samsung’s QLC 9th-generation V-NAND has doubled write performance and improved data input/output speed by 60 percent by the use of predictive programming.
Data read and write power consumption decreased by about 30 and 50 percent respectively, with the use of low-power design technology. This method reduces the voltage that drives NAND cells and minimizes power consumption by sensing only the necessary bit lines.
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