Soitec, GF team on 300mm RF-SOI
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GlobalFoundries (GF) is to use 300mm silicon on insulator wafers from Soitec in France for its 9SW RF process technology.
The deal provides supply of advanced RF-SOI engineered substrates required for 5G, 5G-Advanced, Wi-Fi, and other smart mobile device Radio Frequency Front-End (RFFE) modules and will be made in Singapore.
GF’s 9SW RF-SOI platform has switching speeds up to 112GHz with low-noise amplifiers (LNA) and logic processing capabilities for smartphones. It supports 5G operating frequencies, as well as future 5G mobile and wireless communication applications, spanning Sub-8 GHz, mmWave and FR3.
The RF-SOI 300mm substrate reduces off-capacitance as a result of the optimized silicon thickness, 20% better power efficiency from an optimized oxide layer, and improved RF performance with the RFeSI product family.
“GF continues to deliver highly differentiated, industry-leading technologies required for essential 5G, IoT, Infrastructure and Automotive applications. This collaboration with Soitec shows our commitment to ensure a continuous supply of high-performance RF-SOI solutions that meet our customers’ fast evolving needs” said Faisal Saleem, Senior Vice President of End Markets at GlobalFoundries.
“Soitec has established the world’s largest production capacity to meet growing demand for advanced RF-SOI substrates supporting 5G and WiFi technologies in smartphones, as well as future AR-VR and IoT devices. We are delighted to extend our longstanding relationship with GlobalFoundries in developing the next generation of 300mm RF-SOI technologies. The transition from 5G to 5G-Advanced, and eventually 6G, requires ever-higher performance and energy efficiency, as well as increasing compactness for next-generation devices,” said Jean-Marc Le Meil, Soitec Executive Vice President for Mobile Communications.
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