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ST signs Innoscience as GaN development, manufacturing partner

ST signs Innoscience as GaN development, manufacturing partner

Business news |
By Peter Clarke

Cette publication existe aussi en Français


STMicroelectronics NV has signed a GaN technology development and manufacturing agreement with China’s Innoscience.

The Joint Development Agreement (JDA) covers the use of GaN technology for power electronics for AI datacenters, renewable energy generation and storage, automobiles and more. The two companies have also agreed that Innoscience will be able to make use of ST’s manufacturing capacity in Europe while ST can leverage manufacturing capacity at Innoscience in China.

Innoscience Technology Holding Co. Ltd. (Suzhou, China) is a publicly listed Chinese semiconductor company that claims to be the world’s largest manufacturer focused on GaN.

The company has faced a series of lawsuits with Efficient Power Conversion Corp. of the US and Infineon Technology GmbH in Germany. However, ST has been supportive of the company and helped it list on the Hong Kong stock exchange.

ST backs Innoscience IPO as shares start trading

The agreement between the two companies is an extension of ST’s ‘China-for-China’ strategy.

ST tips Hua Hong deal to support ‘China-for-China’ strategy

ST said the common ambition is for both it and Innoscience to expand their individual offering in GaN with supply chain flexibility and resilience to cover all customers’ requirements in a wide range of applications.

“ST and Innoscience are both Integrated Device Manufacturers (IDMs), and with this agreement we will leverage this model to the benefit of our customers globally. First, ST will be accelerating its roadmap in GaN power technology to complement its silicon and silicon carbide offering. Second, ST will be able to leverage a flexible manufacturing model to serve customers globally,” said Marco Cassis, president of the analog, power, MEMS and sensors business unit at ST, in a statement.

In the same statement, Weiwei Luo, chairman and founder of Innoscience, said: “Innoscience pioneered mass production of 8-inch GaN technology and has shipped over one billion GaN devices into multiple markets, and we are very excited to move into strategic collaboration with ST.

Related links and articles:

www.st.com

www.innoscience.com

News articles:

Innoscience grabs former senior NXP engineer to lead R&D

Innoscience opens up China front in Infineon patent battle

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