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150V n-channel MOSFET for power supplies

150V n-channel MOSFET for power supplies

New Products |
By Nick Flaherty



Toshiba Electronics Europe has launched two 150V N-channel MOSFETs to boost the performance of power supply designs.

The MOSFETs are based upon the latest Toshiba U-MOS X-H Trench process that gives improved reverse recovery characteristics that are critical for synchronous rectification applications

 The TPH1100CQ5 and TPH1400CQ5 devices are designed specifically for use in high-performance switching power supplies, such as those used in data centres and communication base stations as well as other industrial applications.

The MOSFETs have a maximum drain-source voltage (VDSS) rating of 150V and drain current (ID) handling 49A (TPH1100CQ5) and 32A (TPH1400CQ5) and feature a maximum drain-source on-resistance (RDS(ON)) of 11mΩ and 14mΩ.

Toshiba has also developed a G0 SPICE model for rapid verification of the circuit function as well as highly accurate G2 SPICE models, for accurate reproduction of transient characteristics.

Toshiba cuts SiC MOSFET losses by 40% with 4pin Kelvin package

The improved reverse recovery characteristics of the n-channel MOSFETs are critical in synchronous rectification applications. In the case of TPH1400CQ5, the reverse recovery charge (Qrr) is reduced by approximately 73% to 27nC (typ.) and the reverse recovery time (trr) of 36 ns (typ.) is approximately 45% faster compared with Toshiba’s existing TPH1400CQH, which offers the same voltage and RDS(ON).

Used in synchronous rectification applications, the TPH1400CQ5 reduces the power loss of switching power supplies and helps improve efficiency. If the device is used in a circuit that does not operate in reverse recovery mode, the power loss is equivalent to that of the TPH1400CQH.

When used in a circuit that operates in reverse recovery mode, the new products reduce spike voltages generated during switching, helping to improve EMI characteristics of designs, and reducing the need for external filtering. The devices are housed in a versatile, surface-mount SOP Advance(N) package measuring just 4.9mm x 6.1mm x 1.0mm.

toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/12v-300v-mosfets/detail.TPH1100CQ5.html; toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/12v-300v-mosfets/detail.TPH1400CQ5.html

 

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