
China’s Innoscience denies EPC claims of GaN patent infringement
Innoscience, a Chinese startup that manufactures GaN-on-Si power transistors, has called lawsuits filed by US headquartered “malicious” and “at odds with the facts.”
Innoscience Technology Co. Ltd. (Zhuhai China) said it would take all legal measures to counterattack and that the four alleged infringements of foundational GaN patents are without basis. The technology at question here is key to the replacement of silicon power devices with GaN. This is fueling a revolution currently making its way through the power semiconductor sector.
Efficient Power Conversion Corp. (El Segundo, Calif.) has sued Innoscience in the US District Court in the central district of California, western division and the International Trade Commission. EPC is alleging patent infringements seeking damages, a cease and desist order and a ban on the sale of offending GaN transistors into the US.
The four patents are; US patents numbers 8,350,294, 8,404,508, 9,748,347 and 10,312,335.
According to the filing, the ‘294 patent is for a Compensated Gate MISFET and Method for Fabricating the Same. The ‘508 patent is for an Enhancement Mode GaN HEMT Device and Method for Fabricating the Same. The ‘347 patent is Gate with Self-Aligned Ledged for Enhancement Mode GaN Transistors. The ‘335 patent is also for Gate with Self-Aligned Ledge for Enhancement Mode GaN Transistors.
These patents cover core aspects of the design and manufacturing of EPC’s proprietary enhancement-mode gallium nitride power semiconductor devices, the company asserts.
Hiring staff, poaching ideas?
The law suit also references how Innoscience hired two employees previously with EPC – Chunhua Zhou and Larry Chen. It states that they were hired as chief technology officer and head of sales and marketing, respectively, which Innoscience denies (see Innoscience grabs former senior NXP engineer to lead R&D).
It then states that soon after Innoscience introduced a suite of products with the same appearance and almost equal performance across key performance metrics.
In its response Innoscience said: “We believe this action by EPC constitutes illegal competition tactics aimed at undermining Innoscience’s competitive advantage.” The company said it has its own extensive portfolio of global patents, that there is no infringement and that allegations of plagiarism based on the job change of a few employees are speculative and lack a factual basis.
Related links and articles:
News articles:
Innoscience grabs former senior NXP engineer to lead R&D
Navitas buys SiC position with GeneSiC acquisition
Infineon to buy GaN Systems for $830 million
