DDR5 module targets HPC, edge AI
Smart Modular Technologies has launched a DDR5 memory module family for high performance computing, AI and edge computing.
DDR5 memory provides twice the performance of DDR4 with a 4.8 Gbps to 6.4 Gbps data rate from a 4800MHz clock and improved power efficiency over DDR4 by using a 12V voltage regulator (PMIC) on the DIMM module and a 1.1V I/O.
Another important factor contributing to the higher performance is its dual-channel DIMM topology for higher channel efficiency that makes it ideally suited for growing server, cloud computing, and enterprise networking applications.
“As an active participating member of JEDEC, SMART Modular is committed to DDR5 industry enablement and is closely aligned with its DRAM supplier partners to support the industry’s smooth transition to the technology. Our focus is on providing extensive technical support to OEMs designing DDR5 memory into their systems,” said Arthur Sainio, director of DRAM product marketing at Smart Modular Technologies.
DDR5 also achieves increased performance by doubling the burst length to BL16 and bank-count to 32 from 16 on DDR4. For increased reliability and efficiency, DDR5 DIMMs have two 40-bit fully independent sub-channels on the same module and have a maximum die density of 64Gb with the capability of scaling to much higher DIMM storage capacity than DDR4 DIMMs.
Smart Modular’s initial DDR5 module product family includes RDIMMs, UDIMMs and SODIMMs in densities ranging from 16GB to 64GB.
The company is an active participant in JEDEC and supports the DDR5 module specification development process. As with past DRAM technology migration periods, SMART Modular provides early adoption support and guidance to OEMs throughout the transition to the new technology.
- Smart Modular has also completed its acquisition of Cree’s LED business.
Next: Related DDR5 articles
- FIRST MODULE HAS FOCUS ON POWER
- I3C STANDARD EMBEDDED IN PMICS FOR MEMORY MODULES
- COMPLETE MEMORY IP FOR TSMC’S 5nm PROCESS
- MORE THAN A GENERATIONAL UPDATE
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