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Hunan Sanan wins U$500 million silicon-carbide order

Business news |
By Peter Clarke


Hanan Sanan, a subsidiary of Sanan Optoelectronics, has signed an agreement to supply an unnamed strategic automotive partner with US$524 million of silicon-carbide power chips.

The SiC chips will be manufactured at Hunan Sanan’s wafer fabrication facility in Changsha, China, which the company claims is the first vertically integrated SiC wafer manufacturing service platform in China. It makes SiC crystal boules, wafers, performs epitaxy and then makes chips, and performs packaging and test. The production capacity is 40,000 six-inch wafer starts per month.

Sike Semiconductor, is a joint venture established by Hunan Sanan and Li Auto. In August Sike Semi started building a wafer fab for production in 2024. It has a planned annual production capacity of 2.4 million half-bridge SiC power modules.

Automotive-grade SiC MOSFETs out of Hanan Sanan have been qualified and are expected to be released into production in 2024.

The market for SiC power devices is expected to rise from US$1 billion in 2021 to US$6.3 billion in 2027, according to Yole Developpement. However, demand is likely to exceed supply with silicon-carbide substrates as bottleneck in the supply chain.

This is why automakers have started partnering with upstream suppliers to ensure an adequate supply of substrates as well as SiC power MOSFETs and modules, Sanan said.

Related links and articles:

www.sanan-ic.com

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