Infineon ships first SiC devices from 200mm wafers
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Infineon Technologies has shipped its first silicon carbide (SiC) power devices built on larger 200mm wafers.
Almost all SiC devices are built on 150mm wafers, and there are significant challenges in using the larger wafers. Shipping devices from 200mm is a key step for reducing the cost of SiC devices, and 200mm technology is under development at other companies, notably Wolfspeed in the US, STMicroelectronics in Sicily and onsemi in the Czech Republic as well as Rohm and Mitsubishi in Japan.
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The high voltage devices were built at Infineon’s fab in Villach, Austria, but the shipment of these devices this quarter is also a key step for the transition of Infineon’s manufacturing site in Kulim, Malaysia, from 150mm to 200mm wafers in newly built Module 3.
The production sites in Villach and Kulim share technologies and processes which allow for fast ramping and smooth and highly efficient operations in SiC and gallium nitride (GaN) manufacturing.
“The implementation of our SiC production is progressing as planned and we are proud of the first product releases to customers,” said Dr. Rutger Wijburg, Chief Operations Officer of Infineon. “By ramping up SiC production in Villach and Kulim in phases, we are improving cost-efficiency and continuing to ensure product quality. At the same time, we are making sure our manufacturing capacities can meet the demand for SiC-based power semiconductors.”
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