Mitsubishi Electric Corp. has taken an equity position in Novel Crystal Technology Inc. (Sayama City, Japan) a company that sells gallium-oxide wafers for power semiconductors.
Neither the value of the equity stake, nor the percentage size were revealed.
NCT founded in June 2015, is a pioneer of 600V to 10 kV gallium-oxide transistors on β-Ga2O3. Gallium-oxide wafers are expected to help achieve higher breakdown voltages and lower power dissipation than silicon-carbide and gallium-nitride.
Mitsubishi Electric said it intends to develop GaO power semiconductors at an accelerated pace in support of global decarbonization.
Mitsubishi Electric said it expects to accelerate its development of gallium-oxide power semiconductors by combining its own expertise in the design and manufacture of power semiconductors with Novel Crystal Technology’s expertise in the production of gallium-oxide wafers.
Japan has a concentration of research on such novel materials. Flosfia Co. Ltd. (Kyoto, Japan) has announced the development of alpha-phase gallium oxide and iridium gallium oxide (α-IrGa2O3) for power semiconductor applications.
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