Rohm taps TSMC for volume GaN production
Japanese power chip developer Rohm has signed a strategic partnership on development and volume production of gallium nitride (GaN) devices for electric vehicle applications.
The partnership will integrate ROHM’s device development technology with TSMC’s GaN-on-silicon process technology.
The partnership builds on a history of collaboration in GaN power devices. In 2023, Rohm adopted TSMC’s 650V GaN high-electron mobility transistors (HEMT), whose process is increasingly being used in consumer and industrial devices as part of the EcoGaN series, including the 45W C4 Duo AC adapter produced by Innergie, a brand of Delta Electronics.
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TSMC already has a partnership with Infineon for automotive GaN devices though Infineon’s acquisition of GaN Systems, where Rohm is a second source, and TSMC also works with STMicroelectronics on volume GaN technology.
“GaN devices, capable of high-frequency operation, are highly anticipated for their contribution to miniaturization and energy savings, which can help achieve a decarbonized society. Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology” said Katsumi Azuma, Member of the Board and Senior Managing Executive Officer at ROHM. “In addition to this partnership, by providing user-friendly GaN solutions that include control ICs to maximize GaN performance, we aim to promote the adoption of GaN in the automotive industry.”
“As we move forward with the next generations of our GaN process technology, TSMC and ROHM are extending our partnership to the development and production of GaN power devices for automotive applications,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC.
“By combining TSMC’s expertise in semiconductor manufacturing with ROHM’s proficiency in power device design, we strive to push the boundaries of GaN technology and its implementation for EVs.”
Rohm has its own silicon carbide (SiC) power device production through its fab in Japan, and has a deal with Tier One supplier Valeo for SiC chips.
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