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Rohm to accelerate 6th, 7th gen SiC devices

Rohm to accelerate 6th, 7th gen SiC devices

Business news |
By Nick Flaherty



Rohm is planning to launch its 5th generation SiC MOSFETs in 2025 and is accelerating market introduction of 6th and 7th generation devices for electric vehicle designs.

This comes as SiC bare MOSFETs from Rohm are  being used in three new models from Chinese EV maker ZEEKR, part of the Geely group.

The fourth generation SiC bare die are shipped from Haimosic in Shanghai, a joint venture between Rohm and the Zhenghai Group to Viridi E-Mobility Technology in Ningbo for inverter designs.

Geely and Rohm have been collaborating since 2018, beginning with technical exchanges, then later forming a strategic partnership focused on SiC power devices in 2021. This led to the integration of Rohm’s ecoSiC MOSFETs into the traction inverters of three models: the ZEEKR X, 009, and 001.

The ZEEKR X compact SUV has a maximum output of 300kW and cruising range of more than 400km. The 009 minivan features an intelligent cockpit and large 140kWh battery, achieving an outstanding maximum cruising range of 822km. The flagship model, 001, offers a maximum output of over 400kW from dual motors with a range of over 580km along with a four-wheel independent control system.

Offering its ecoSiC devices in various forms, including bare chips, discrete components and modules is boosting the widespread adoption of SiC technology, says Rohm, which was the world’s first supplier to begin mass production of SiC MOSFETs in 2010. It has established an integrated production system throughout the manufacturing process.

www.rohm.com/products/sic-power-devices

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