100G lasers for datacentre transceivers

June 02, 2021 // By Nick Flaherty
100G lasers for datacentre transceivers
A combination of materials and RF analogue design has enabled II-VI to develop 100Gbit/s lasers for datacentre transceiver designs

II‐VI has launched 100 Gbit/s indium phosphide (InP) directly modulated lasers (DMLs) for high-speed transceivers deployed in datacentres.

The growing demand for 400 and 800 gigabit Ethernet (GbE) transceivers is driving the move to DMLs for the lower cost and lower power consumption compared to electro-absorption modulated lasers (EMLs) that are currently used in these high-speed transceivers. 

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“The technology embedded in these directly modulated lasers is so advanced that our early results were published in the journal Nature Photonics in January of 2021,” said Dr. Charlie Roxlo, Vice President of the Indium Phosphide Devices Business Unit at II-VI. “This breakthrough performance was achieved thanks to multiyear R&D investments and deep expertise across a broad internal multi-disciplinary team of semiconductor laser physicists, high-speed RF analogue integrated circuit designers, and transceiver experts.”

The DMLs are built on the existing highly reliable InP technology platform that already has over 100m lasers in the field deployed over the last decades. The low power consumption of II-VI’s DMLs and their design for non-hermetic packaging are key features for current pluggable form factors and co-packaged designs being developed.

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