650V power MOSFET halves on resistance
Cette publication existe aussi en Français
Vishay Intertechnology has halved the on resistance in its fourth generation 650 V superjunction power MOSFET for telecoms, industrial and computing applications.
Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E cuts on-resistance by 48.2% to 0.048 Ω at 10 V, while offering a 65.4% lower resistance times gate charge, a key figure of merit (FOM) for 650 V MOSFETs used in power conversion applications.
With the SiHK050N65E and other devices in the Gen 4.5 650 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture — power factor correction (PFC) and subsequent DC-DC converter blocks.
Typical applications will include servers, edge computing, and super computers; UPS; high intensity discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.
The E Series superjunction technology produces a typical on-resistance of 0.048 Ω at 10 V for a higher power rating for applications over 6 kW. With 50 V of additional breakdown voltage, the 650 V device addresses 200 VAC to 277 VAC input voltages and the Open Compute Project’s Open Rack V3 (ORV3) standards.
In addition, the MOSFET offers a gate charge down to 78 nC for a resulting FOM of 3.74 Ω*nC. This translates into reduced conduction and switching losses to save energy and increase efficiency to meet the titanium efficiency requirements in server power supplies or reach 96 % peak efficiency.
For improved switching performance in hard-switched topologies such as PFC and two-switch forward designs, the MOSFET released today provides low typical effective output capacitances Co(er) and Co(tr) of 167 pF and 1119 pF, respectively. The device’s resulting resistance times Co(er) FOM is an industry-low 8.0 Ω*pF.
The SiHK050N65E is available in the PowerPAK10 x 12 package with a Kelvin connection for reduced gate noise and provides increased dv/dt ruggedness. RoHS-compliant and halogen-free, the MOSFET is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.
Samples and production quantities of the SiHK050N65E are available now.
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
