Experimental MPW run from Graphenea Semiconductor

Experimental MPW run from Graphenea Semiconductor

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By Wisse Hettinga

Multi project wafer (MPW) runs are a common practice within the semiconductor ecosystem

Universities, R&D centres and startups, which usually only need a few prototypes and operate with tight budgets, take advantage of this service to obtain devices at an affordable entry point.

This is carried out with a mask sharing scheme, where devices with different geometries but shared device architecture are manufactured within the same mask; in this way, everyone gets a few devices but no one needs to purchase more devices than necessary. Now, Graphenea partners with the 2D Experimental Pilot Line (2D-EPL) to offer an MPW run with a novel process flow.

Operating within the esteemed 2D-EPL under the auspices of the Graphene Flagship, Graphenea Semiconductor unveils a cutting-edge process flow that aims to redefine possibilities in device architecture and application versatility.

At the heart of this innovation lies a novel device fabrication process flow meticulously crafted by Graphenea. This versatile framework unlocks the potential for three distinct device architectures, catering to a spectrum of applications spanning from general electronics to advanced sensing and optoelectronics. Central to this advancement is the utilisation of HfOx as the dielectric material, offering superior capacitive coupling and enhanced operational efficiency at lower voltages. Complementing this, the introduction of AlOx as the passivation layer adds further resilience, withstanding the rigours of harsh solvents commonly encountered in functional environments.

There are three device architectures that can be implemented:
DEVICE A: This architecture enables devices with backgates, where the gate dielectric is HfOx.

2-Terminal Devices: These devices, featuring options for full, partial or no dielectric encapsulation, serve as versatile chemiresistors while retaining the capability for backgating through the substrate. This versatility extends to applications such as magnetic sensing, VOC detection and gas sensing, among others.

3-Terminal Devices with Backgates: Offering similar encapsulation options, these devices present a platform for sensitisation with various materials including dyes, quantum dots and perovskites. Moreover, the flexibility extends to the creation of hybrid biosensors, where liquid gating and backgating can be alternately performed on the same device, opening new avenues for advanced sensing applications.

4-Terminal Devices: Featuring full, partial or no dielectric encapsulation, these devices offer a diverse range of functionalities. From the creation of Hall bar devices to the integration of gas sensors with local heaters, this architecture empowers precise control over desorption phenomena on the channels, enabling fine-tuned sensing capabilities.

Despite its experimental nature within the 2D EPL, Graphenea brings to the table a wealth of experience in fabricating Graphene Field-Effect Transistors (GFETs), having successfully manufactured over half a million units. Leveraging this expertise, our seasoned team stands ready to collaborate with you, providing invaluable insights and support through our direct communication channels.

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