GaN sensors for deep UV are more sensitive

GaN sensors for deep UV are more sensitive

New Products |
By Peter Clarke

Kyoto Semiconductor Co. Ltd. (Kyoto, Japan), an optical device maker, has announced two GaN ultraviolet sensors; KPDU086SU27-H11Q and KPDU086SU31-H11Q.

The UV sensors “KPDU086SU27-H11Q” and “KPDU086SU31-H11Q” were developed with the aim of achieving higher sensitivity than conventional silicon-based UV sensors to meet the needs of the deep UV sensing market.

Since conventional Si-type UV sensors detect a wide range of wavelengths, it is common to apply a filter to limit the sensitivity to the UV wavelength range. The amount of light was attenuated by passing through the filter.

The KPDU086SU27-H11Q and KPDU086SU31-H11Q use GaN to enable direct light reception at the light receiving part of the sensor without using a filter as GaN has sensitivity to a specific wavelength range of ultraviolet light. It is now possible to obtain approximately three times as high sensitivity as Si-type UV sensors.

In addition, the products have sensitivity in the wavelength range limited to UV-B and UV-C. UV-B covers the wavelength range of λ = 280 to 315 nm. Sensitivity wavelength range of KPDU086SU31-H11Q. UV-C: covers the emission wavelength range of λ = 100 to 280 nm. Sensitivity wavelength range of KPDU086SU27-H11Q.

The new products can be used to monitor the ultraviolet light intensity of germicidal lamps in food factories, medical institutions, and water purification-related institutions, and to monitor the light intensity of ozone detection light sources.

The mass production of the GaN UV sensors “KPDU086SU27-H11Q and KPDU086SU31-H11Q” are scheduled to start on April 28, 2023.

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