Isolation boost for 20V MOSFET in chip scale package
Rohm has developed a 20V n-channel MOSFET in a new chip scale package for wearable, hearable and smartphone designs.
The RA1C030LD is offered in the DSN1006-3 wafer-level, chip-size package that measures 1.0mm × 0.6mm. This is made possible by a proprietary IC process to achieve low power dissipation together with greater miniaturization and a new packaging technique.
The figure of merit (ON-resistance × Qgd) is 20% lower than standard package products in the same package (1.0mm × 0.6mm or smaller), contributing to a significantly smaller board area along with higher efficiency in a variety of compact devices.
The package structure provides insulated protection for the side walls. This reduces the risk of shorts due to contact between components in compact devices for safer operation and higher density designs.
Rohm plans to develop MOSFETs with even lower ON resistance than the current 80mΩ in smaller package sizes to improve efficiency in a variety of compact devices.
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