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Kioxia begins construction of 3D-NAND flash fab

Kioxia begins construction of 3D-NAND flash fab

Business news |
By Peter Clarke



Kioxia Corp. has announced that construction of its K2 wafer fab for 3D-NAND flash memory production at its Kitakami campus, in Iwate prefecture, Japan, will begin in April 2022.

Construction is expected to be completed in 2023. The 136,000 square meter site is adjacent to an established wafer fab. K2 will make use of artificial intelligence systems to increase production capacity across the entire site.

It will have an earthquake-resistant architectural structure and energy-saving manufacturing equipment and renewable energy sources.

Kioxia said it plans to hold discussions with Western Digital with regard to expanding the established flash memory joint venture between the companies to the K2 investment.

Kioxia is also constructing a wafer fab at its Yokkaichi site in Mie Prefecture (see Kioxia announces next 3D-NAND wafer fab, delays IPO).

Related links and articles:

www.kioxia.com

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Flash memory price to rise on Kioxia material contamination

Kioxia announces another 3D-NAND wafer fab

Kioxia announces next 3D-NAND wafer fab, delays IPO

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